One key component of the Galaxy S7 is Samsung’s ultra-fast universal flash storage (UFS) that’s able to offer better speeds than typical memory solutions used in smartphones and other computers. Based on Samsung’s advanced V-NAND flash memory chips, the UFS storage would significantly improve the iPhone’s performance. A new report says that although Samsung and Apple have inked a storage deal for the first time since the iPhone 5, Samsung’s UFS might not make it into the iPhone until next year.
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According to South Korea’s ETNews, Samsung will supply NAND flash memory to Apple’s iPhone in the near future. Apparently, Samsung’s memory was dropped from the iPhone supply chain as the Galaxy S device maker failed to agree with Apple’s manufacturing requests..
ETNews’ new report claims that Samsung is currently working with partners to create its own EMI shielding for the chips, which means that iPhone memory supply might be ready starting next year. Thus, the iPhone 7 might not be equipped with Samsung NAND flash this year.
Other memory providers are also looking to provide EMI-protected NAND memory to Apple in the future. SK Hynix is one of the companies that’s apparently going to use technology similar to what Samsung is working on.
Before unveiling the Galaxy S7 this year, Samsung unveiled its first 256GB memory UFS 2.0 chip, prompting speculation that such a component might be used in the future in iPhone and iPad models, maybe even starting with the iPhone 7.
